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Part Name(s) : GT20J341 20J341
Toshiba
Description : Discrete IGBTs Silicon N-Channel IGBT
Part Name(s) : SG50N06S SG50N06DS
Sirectifier Global Corp.
Description : Discrete IGBTs
Part Name(s) : GT30J341 30J341
Toshiba
Description : Discrete IGBTs Silicon N-Channel IGBT
Part Name(s) : SG50N06D2S SG50N06D3S
Sirectifier Electronics
Description : Discrete IGBTs
Part Name(s) : SG50N06S SG50N06DS
Sirectifier Electronics
Description : Discrete IGBTs
Part Name(s) : SG50N06T SG50N06DT
Sirectifier Electronics
Description : Discrete IGBTs
Part Name(s) : 40QR21 GT40QR21
Toshiba
Description : 40QR21 / Discrete IGBTs Silicon N-Channel IGBT
Part Name(s) : SG50N06T SG50N06DT
Unspecified
Description : Discrete IGBTs
Part Name(s) : SG50N06D2S SG50N06D3S
Sirectifier Global Corp.
Description : Discrete IGBTs
Part Name(s) : SG50N06T SG50N06DT
Sirectifier Global Corp.
Description : Discrete IGBTs
Part Name(s) : SG50N06D2S SG50N06D3S
Unspecified
Description : Discrete IGBTs
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (650V,12A)
Part Name(s) : 30F121 GT30F121
Toshiba
Description : Insulated Gate Bipolar Transistor
Part Name(s) : H12N60 H12N60F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (600V,12A)
Part Name(s) : IRG4PC30UD
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Part Name(s) : IRG4PC40FD
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Part Name(s) : IRG4PC30FD
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE